SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5015/D




The RF MOSFET Line
N–Channel Enhancement–Mode MRF5015
Designed for broadband commercial and industrial applications at frequencies
to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
Guaranteed Performance at 512 MHz, 12.5 Volts
Output Power — 15 Watts
Power Gain — 10 dB Min
Efficiency — 50% Min
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
All Gold Metal for Ultra Reliability
Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
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